RUMORED BUZZ ON N TYPE GE

≤ 0.15) is epitaxially developed over a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and then the structure is cycled through oxidizing and annealing stages. A result of the preferential oxidation of Si more than Ge [68], the first Si1–Nghiên cứu của FDA đưa ra kết luận rằng germani, khi sử đụng như l